SBT80-06GS no. a0798-1/3 applications ? high frequency recti cation (switching regulators, converters, choppers) features ? guaranteed up to tj=150c ? low forward voltage (v f max=0.58v) ? short reverse recovery time ? low switching noise ? high reliability due to highly reliable planar structure speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 60 v nonrepetitive peak reverse surge voltage v rsm 66 v average output current i o 50hz resistive load, sine wave tc=112c 8 a surge forward current i fsm 50hz sine wave, 1 cycle 80 a junction temperature tj --55 to +150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7530-002 ordering number : ena0798 63010sd tk im tc-00002375 sanyo semiconductors data sheet SBT80-06GS http:// semicon.sanyo.com/en/network schottky barrier diode (twin type ? cathode common) 60v, 8a recti er 1 : anode 2 : cathode 3 : anode sanyo : to-220(ls) 123 0.8 0.4 2.55 2.55 2.55 2.55 10.2 1.2 4.5 15.1 14.0 2.7 2.7 (1.6) 14.0 3.6 6.3 1.3 product & package information ? package : to-220(ls) ? jeita, jedec : sc-46, to-220ab ? minimum packing quantity : 100 pcs./bag, 50 pcs./magazine marking electrical connection sbt 80-06 lot no. 13 2
SBT80-06GS no. a0798-2/3 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max reverse voltage v r i r =1ma, tj=25c * 60 v forward voltage v f i f =3.0a, tj=25c * 0.58 v reverse current i r v r =30v, tj=25c * 0.1 ma interterminal capacitance c v r =10v, tj=25c * 130 pf thermal resistance rth(j-c) junction-case : smoothed dc 4.6 c / w note) * : value per element (3) (1) (2) (4) 0 0 4.5 1.5 2.0 2.5 3.0 3.5 4.0 1.0 0.5 20 10 30 40 50 60 70 0 0.5 1.0 1.5 2 5 7 3 2 5 7 3 2 10 1.0 0.1 forward voltage, v f -- v forward current, i f -- a i f -- v f it08385 reverse voltage, v r -- v i r -- v r reverse current, i r -- ma it08386 (4) (2) (3) (1) 0 0 12 4 10 6 8 2 310 8 79 56 4 average output current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w it08387 peak reverse voltage, v rm -- v p r (av) -- v rm average reverse power dissipation, p r (av) -- w it08388 180 360 v r p r max at tj=150 c tj=150 c 25 c 180 360 360 0 1.0 10 100 2 5 5 7 7 7 3 2 5 3 10 20 30 40 50 60 70 tj=150 c max 125 c typ 100 c typ 150 c typ (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 rectangular wave sine wave (1)rectangular wave =300 (2)rectangular wave =240 (3)rectangular wave =180 (4)sine wave =180 360 v r rectangular wave sine wave represented by max reverse voltage, v r -- v interterminal capacitance, c -- pf average output current, i o -- a tc -- i o case temperature, tc -- c 2 5 100 2 3 5 7 357 2357 10 100 1.0 c -- v r f=100khz it08495 (1) (4) (3) (2) 0 70 80 90 100 110 120 130 140 150 160 2 170 410 68 13 9 57 it12855 rectangular wave 360 (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 180 360 sine wave
SBT80-06GS no. a0798-3/3 ps this catalog provides information as of june, 2010. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. i s 20ms t 0.01 23 7 7 0.1 0 52 23 37 1.0 5 120 60 80 100 20 40 time, t -- s surge forward current, i fsm (peak) -- a id01009 i fsm -- t current waveform 50hz sine wave tj=150 c rth(j-c) -- t transient thermal resistance, rth(j-c) -- c / w time, t -- s 1.0 10 0.001 0.01 0.1 1.0 10 2 3 525252 2 357 37 37 37 7 5 3 2 5 7 it12077
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